Atomic layer deposition

Atomic Layer Deposition and Its Applications in Optical Thin Films

原子层沉积技术及其在光学薄膜中的应用

Theory and Applications of Atomic Layer Deposition

单原子层沉积原理及其应用

Thermal Stability of Atomic Layer Deposition Al_2O_3 Thin Films

原子层淀积Al2O3薄膜的热稳定性研究

Preparing aluminum nitride thin film by atomic layer deposition

氮化铝薄膜的原子层淀积制备及应用

Atomic layer deposition of metal oxide films

原子层淀积制备金属氧化物薄膜研究进展

Preparation and Characterization of TaN ALD Precursors Atomic layer deposition of metal oxide films

TaN薄膜原子层淀积（英文）原子层淀积制备金属氧化物薄膜研究进展

Density Functional Theory Study on Surface Reaction Mechanism of Atomic Layer Deposition of ZrO_2 on Si ( 100 ) - 2 × 1

ZrO2在Si（100）-2×1表面原子层淀积反应机理的密度泛函理论研究

Endcapping of Octadecyl Bonded Silica by Atomic Layer Deposition for Separation of Basic Compounds

十八烷基键合硅胶的原子层沉积法封尾及其在碱性化合物分离中的应用

Two researchers at Max Planck Institute of Microstructure Physics in Halle , Germany have developed a process called atomic layer deposition .

德国哈雷的马普微结构物理研究所的两名研究人员研制出的原子层积累技术有望使之成为可能。

The preparation method of zinc oxide has many , such as : sputtering , pulsed laser deposition , molecular beam epitaxy and atomic layer deposition .

目前氧化锌的制备方法有很多，如：溅射法、脉冲激光沉积、分子束外延和原子层淀积等。

The laboratory is used in atomic layer deposition method , so the paper firstly studies the different growth temperature , atomic layer deposition process of zinc oxide thin film growth rate .

由于实验室采用的是原子层淀积方法，所以论文首先研究不同生长温度条件下，原子层淀积工艺对氧化锌薄膜生长速率的影响。

Based on the basic principles of atomic layer deposition , we designed four forms of VS-ALDR . Respectively ( 1 ) No aperture fan-shaped inlet design ;

依据原子层沉积的基本原理，对VS-ALDR进行了四种形式的进口设计方案，分别为（1）无间隙扇形分隔进口设计；

Atomic layer deposition ( ALD ), as a growth method based on two separate self-limiting surface reactions , is a preferred technique to achieve high-quality , conformal , ultra-thin dielectric films with precise thickness control .

原子层沉积工艺（ALD）依靠化学源在衬底表面的自限制反应沉积薄膜，能够控制薄膜的厚度，是沉积高质量、保形的超薄栅介质薄膜的首选方法。

In order to overcome these two shortcomings of ALD technology , a lot of groups proposed different solutions , such as strong oxidants assisted atomic layer deposition , magnetron plasma assisted atomic layer deposition and so on .

为了克服ALD技术这两个缺点，很多课题组提出了不同的解决方法，例如强氧化剂辅助原子层沉积，磁控等离子体辅助原子层沉积等方法。

In this thesis , the electrochemical atomic layer deposition ( EC-ALD ) method was used to fabricate several functional semiconductor compounds on different substrates , and the application of these thin films such as photoelectrocatalysis and organic degradation were also investigated .

本博士学位论文主要是利用电化学原子层沉积法（EC-ALD）在不同基底上沉积制备了几种功能性半导体纳米薄膜材料，并探讨了这些功能薄膜材料在光电催化和有机物降解等方面的应用。

Plasma Enhanced Atomic Layer Deposition ( PEALD ) is based on traditional ALD equipment and increase a RF function , it can make the less active precursor sources of ionization ion . It can get a faster growth rate and improve deposition efficiency .

等离子体增强原子层沉积技术（PEALD）是在传统的ALD设备基础上增加了射频产生等离子体的功能，可以使活性较低的前驱体源电离成离子，增快生长速度，提高沉积效率。